Characteristics of high-power, InGaAs/AlGaAs laser diodes

Both gain-guided and index-guided InGaAs/AlGaAs pseudomorphic laser diodes have been fabricated and tested. The characteristics are similar to lattice-matched GaAs/AlGaAs lase diodes in that the threshold current, differential efficiency, and maximum output powers are comparable. Output powers of 3 W CW have been achieved at 960 nm from a 100 micron aperture laser. An increase in the gain coefficient by 30 percent has been measured in the lasers with strained active regions. Single-mode lasers have also been fabricated which operate to 350 mW, 180 mW in a single transverse and longitudinal mode.