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Acemap > Paper > Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al2O3-Dielectric

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al2O3-Dielectric

2016 
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