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Formation of Low Resistive S/D-Extension using Carborane Molecular Ion Implantation for Sub-45-nm PMOSFET
Formation of Low Resistive S/D-Extension using Carborane Molecular Ion Implantation for Sub-45-nm PMOSFET
2008
S. Endo
Y. Kawasaki
T. Yamashita
Hidekazu Oda
Y. Inoue
Keywords:
Polyatomic ion
Nanotechnology
Photochemistry
Carborane
Resistive touchscreen
Materials science
Physical chemistry
Correction
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