Fundamental Limits on the Mobility of Nanotube‐Based Semiconducting Inks

[∗] N. Rouhi , D. Jain , K. Zand Prof. P. J. Burke Integrated Nanosytems Research Facility Department of Electrical Engineering and Computer Science University of California-Irvine Irvine, CA, USA; pburke@uci.edu Carbon-nanotube-based semiconducting inks offer great promise for a variety of applications including fl exible, transparent, and printed electronics and optics. A critical drawback of such inks has been the presence of metallic nanotubes, which causes high-mobility inks to suffer from poor on/off ratios, preventing their applications in a wide variety of commercial settings. Here, we report a comprehensive study of the relationship between mobility, density, and on/off ratios of solution-based, deposited semiconducting nanotube ink used as the channel in fi eld effect transistors. A comprehensive spectrum of the density starting from less than 10 tubes μ m − 2 to the high end of more than 100 tubes μ m − 2 have been investigated. These studies indicate a quantitative trend of decreasing on/off ratio with increasing density and mobility, starting with mobilities over 90 cm 2 V − 1 s − 1 (approaching that of p-type Si MOSFETs) but with on/off ratios ∼ 10, and ending with on/off ratios > 10 5