On the construction of an Fe3O4 based all-oxide spin-valve

Abstract The progress made in constructing an all-oxide spin valve based on the intrinsic, fully spin-polarized electron transport in Fe 3 O 4 is discussed. Two possible oxidic spacer layers, MgO and Mn 3 O 4 , have been investigated. Interlayer coupling studies indicate that MgO is the more suitable spacer layer of the two. Thus far a limited magnetoresistive effect ⩽0.4% is found in the all oxide, Fe 3 O 4 -based, spin-valves which we have made. Possible causes for this low magnetoresistive effect are discussed.