Carbon-doped GeTe: A promising material for Phase-Change Memories

This paper investigates Carbon-doped GeTe (GeTeC) as novel material for Phase-Change Memories (PCM). In the first part of the manuscript, a study of GeTeC blanket layers is presented. Focus is on GeTeC amorphous phase stability, which has been studied by means of optical reflectivity and electrical resistivity measurements, and on GeTeC structure and composition, analyzed by XRD and Raman spectroscopy. Then, electrical characterization of GeTeC-based PCM devices is reported: resistance drift, data retention performances, RESET current and power, and SET time have been investigated. Very good data retention properties and reduction of RESET current make GeTeC suitable for both embedded and stand-alone PCM applications, thus suggesting GeTeC as promising candidate to address some of the major issues of today’s PCM technology.