A 6 kV/5 kA reverse conducting GCT

A reverse conducting gate commutated thyristor (RCGCT) rated at 6000 volts and 5000 amperes has been developed. Low loss, snubberless turn off, and high reliability have been achieved using the same advanced technology that produced the 6000 volt, 6000 ampere asymmetric GCT. That is, the GCT part is realized using MEPLT (multi energy proton lifetime control technology). Now a monolithic low loss free wheel diode is included on the same wafer. Integration of the free wheel diode with the GCT on the same wafer in the same package allows considerable reduction in size, weight, and assembly complexity. This new device will contribute to further miniaturization and improved performance and reliability of high power electronic systems.