Ion-implanted P-channel GaAs MESFET using Schottky barrier height tailoring

A new P-channel GaAs MESFET has been fabricated by ion implantation. The low P-GaAs Schottky barrier height has been increased using a barrier tailoring technique, resulting in substantially improved device characteristics. Extrinsic transconductances as high as 22 mS/mm are obtained from 1μm P-MESFETs at room temperature with gate voltage swings in excess of 1 V.