Semiconductor devices having recessed active regions and methods for fabricating the same

The present invention relates to a semiconductor device having a recessed active region and a method for manufacturing the same, wherein the semiconductor device comprises: a substrate including a device isolating film which defines a first junction region and a second junction region; a word line embedded in the substrate; a bit line intersecting with the word line on the substrate; a first electrical connection part which is disposed between the substrate and the bit line and is electrically connected with the first junction region; and a second electrical connection part which is disposed on a side of the bit line and is electrically connected with the second junction region. The substrate includes a contact hole in which the first junction region and the device isolation film are recessed to be defined and the first electrical connection part is placed. The upper surface of the first junction region is recessed to below of the bottom surface of the contact hole.