Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer

The barium titanate-based (BTO-based) resistive random-access memory (RRAM) was successfully fabricated by sol-gel process. The ITO/BTO/Al structure showed stable switching behaviors due to it can offer smooth surface by sol-gel methods. Moreover, based on this structure inserted with graphene oxide (GO) interlayers, the device exhibited good stability and enhancement of the on/off current ratio about two orders, which can be attributed to absorption/release of oxygen related functional groups of GO.