Communication—Room Temperature Photoluminescence Characterization of Impact of Electrical Arcing on Silicon

Corona discharge-based non-contact capacitance-voltage (C-V) measurement technique has been used for characterization of dielectrics on Si. For corona discharge generation, high voltage is applied to an electrode above dielectrics/Si sample. High voltage electrical discharge and arcing experiments were performed on Si wafers to investigate potential impact (or side effect) on electronic properties of Si wafers. Room temperature photoluminescence (RTPL) spectra from Si samples were measured before and after high voltage direct current (HVDC) discharge and Piezo ignition arcing experiments. Distinctive discharge and arcing footprints were observed in RTPL area maps suggesting modification of electronic properties.