Effect of H 2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH 4

Low-temperature polycrystalline Si films were fabricated by radio frequency plasma-enhanced chemical vapor deposition using SiH 4 , Ar and H 2 as source gas. It was found that the content of H 2 in the mixture plays an important role for crystallization of Si films. High-quality low-temperature polycrystalline Si films were obtained under the optimal amount of H 2 in the source gas.