N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature Over 448 K

In this article, we investigated the destructive behavior of the latest power diode when operating a hard-switching process. From the numerical simulation analysis, the destruction behavior originates in the enhanced impact ionization at the p-n junction on the anode side and current filament in the active region. A relaxing electric field on the anode side and a moderated electric field on the cathode side prevent the above-mentioned behavior. These improvements result from controlling the carrier-plasma layer in the n-buffer layer on the cathode side. This article demonstrates the effective n-buffer technology for the power diode that achieves superior dynamic robustness and high operating temperature over 448 K.