Metal–organic chemical vapor deposited copper interconnects for deep submicron integrated circuits

Abstract We report on the successful implementation of interconnects with metal–organic chemical vapor-deposited copper using dual damascene technology. The average resistances of the Kelvin vias and via chains (with a via diameter of 0.28 μm) are 0.62 and 0.72 Ω, respectively. The average line–line leakage current measured at a field of 4500 V/cm at room temperature is about 10 −10 A. It does not increase significantly with the applied electrical field up to about 2.5 MV/cm. These data meet the industrial standards for copper interconnects in the deep submicron integrated circuits and can be improved further by optimizing the ionized metal plasma flash copper.