β-Ketoiminato-based copper(II) complexes as CVD precursors for copper and copper oxide layer formation

The synthesis of ketoiminato copper(II) complexes [Cu(OCRCHC(CH3)NCH2CH2X)(μ-OAc)]2 (X = NMe2: 4a, R = Me; 4b, R = Ph. X = OMe: 5, R = Me) and [Cu(OCRCHCMeNCH2CH2NEt2)(OAc)] (6, R = Me) from RC(O)CHC(CH3)N(H)CH2CH2X (X = NMe2: 1a, R = Me; 1b, R = Ph. X = NEt2: 1c, R = Me. X = OMe: 2, R = Me) and [Cu(OAc)2·H2O] (3) is reported. The molecular solid-state structures of 4–6 were determined by single crystal X-ray diffraction studies, showing that 4a,b and 5 are dimers which are set up by two [{Cu(μ-OAc)L}] (L = ketoiminato ligand) units featuring a square-planar Cu2O2 core with a distorted square-pyramidal geometry at Cu(II). In contrast, 6 is monomeric with a tridentate-coordinated OCMeCHCMeNCH2CH2NEt2 ligand and a σ-bonded acetate group, thus inducing a square-planar environment around Cu(II). The thermal behavior of all complexes was studied by TG (Thermogravimetry) and DSC (Differential Scanning Calorimetry) under an atmosphere of Ar and O2. Complex 4b shows the highest first onset temperature at 213 °C (under O2) and 239 °C (Ar). PXRD studies confirmed the formation of CuO under an atmosphere of O2 and Cu/Cu2O under Ar. TG-MS studies, exemplarily carried out with 4a, indicate the elimination of the ketoiminato ligands with detectable fragments such as m/z = 15, 28, 43, 44, 45, and 60 at a temperature above 250 °C. Vapor pressure measurements displayed that 5 shows the highest volatility of 3.6 mbar at 70 °C (for comparison, 4a, 1.4; 4b, 1.3; 6, 0.4 mbar) and hence 4a and 5 were used as MOCVD precursors for Cu/Cu2O deposition on Si/SiO2 at substrate temperatures of 450 °C and 510 °C. The deposition experiments were carried out under an atmosphere of nitrogen as well as oxygen. The as-obtained layers were characterized by SEM, EDX, XPS, and PXRD, showing that with oxygen as the reactive gas a mixture of metallic copper and copper(I) oxide without carbon impurities was formed, while under N2 Cu films with 53–68 mol% C contamination were produced. In a deposition experiment using precursor 5 at 510 °C under N2 a pure copper film was obtained.