Piezoelectric memorizer unit based on ferroelectric tunnel junctions and manufacturing method thereof

The invention discloses a piezoelectric memorizer unit based on ferroelectric tunnel junctions and a manufacturing method thereof. The piezoelectric memorizer unit is formed by the fact that a bottom electrode layer, an ultrathin ferroelectric layer and a top electrode layer are sequentially arranged on a substrate from bottom to top. The manufacturing method comprises the steps that the bottom electrode layer is firstly deposited on the substrate, the ultrathin ferroelectric layer is manufactured on the bottom electrode layer through a pulsed laser deposition method, then the top electrode layer is generated on the manufactured ultrathin ferroelectric layer, and the piezoelectric memorizer unit is obtained at least. The manufactured piezoelectric memorizer unit has high piezoelectric coefficients, can achieve non-destructive read, and is high in storage density; in addition, the bottom electrode and the top electrode can adopt the same or different metal electrodes or metallic oxide electrodes, the defect that only asymmetric electrodes can be adopted in the prior art is overcome, and industrialization realization is facilitated.