Optical absorption studies of (Ga0.1In0.9)2Se3 thin film

Thermal evaporation technique was used to deposit (Ga0.1In0.9)2Se3 thin films. The optical transmission spectra of (Ga0.1In0.9)2Se3 thin film were studied in the temperature range 77-300 K. Temperature behaviour of the Urbach absorption edge as well as the temperature dependencies of the energy pseudogap and Urbach energy were investigated. The influence of different types of disordering on the optical properties of (Ga0.1In0.9)2Se3 thin film was discussed. Optical parameters of (Ga0.1In0.9)2Se3 thin film and single crystal were compared.