Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony Ions

In this paper, we study the radiation-induced processes occurring during the implantation of antimony ions into films of the positive diazoquinone-novolac (DQN) FP9120 photoresist (PR) on silicon by the Fourier-transform infrared (FTIR) spectroscopy of the frustrated total internal reflection (TIR). Ion implantation (II) is found to lead to the appearance in the frustrated TIR spectrum of a band at 2331 cm–1 caused by the O=C=O stretching vibrations. The violation of adhesion at the PR/silicon interface manifests itself in the appearance of a 610 cm–1 band related to the absorption of the Si lattice. The formation of new C–O–C bonds because of the ether cross links of ketene with the OH group of novolac resin is found.