Effective lifetime of electrons trapped in the oxide of a metal–oxide–semiconductor structure

1999 
A simple and effective analytical model is developed to calculate the lifetime of an electron trapped in the oxide layer of a metal–oxide–semiconductor (MOS) device using quantum mechanical analysis. A new approach of applying transmission line techniques is introduced to study the time evolution of the electron wave function localized in a trap quantum well in the oxide of MOS devices. Treating it as a one-dimensional problem, with tunneling probabilities through both the interfaces, and exploiting the effective similarity with the time evolution of electron wave packet localized in a double-barrier quantum well, a model is developed to calculate the lifetime of the trapped electron under flat band condition. It is further extended to calculate the effective lifetime of electrons trapped at various trap centers in the oxide layer under externally applied electric fields. Results thus obtained are in reasonable agreement and consistent with the physical concepts and the experimental observations.
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