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Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth
Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth
2012
Ryo Matsumura
Yuki Tojo
Hiroyuki Yokoyama
Masashi Kurosawa
Taizoh Sadoh
Masanobu Miyao
Keywords:
Nanotechnology
Insulator (electricity)
Materials science
Composite material
Optoelectronics
cooling rate
Correction
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