The influence of lateral carrier diffusion and surface recombination on the behavior of semiconductor optical amplifier (SOA)-based MMIs
2003
The influence of lateral carrier diffusion and surface recombination on the self-imaging properties of semiconductor-optical-amplifier-based multimode interference couplers has been verified by simulations using a beam propagation method. It shows a significant degradation of the self-imaging properties of these devices. Buried heterostructures or deeply etched waveguide structures can decrease the impact when the degree of surface recombination is sufficiently low.
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