Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

In this communication, a direct coupling of patterned growth of rubrene crystalline thin films with OFET fabrication is presented. The film was grown between pre-patterned Au electrodes covered with an organic monolayer, which directly allowed the fabrication of OFET devices with a sub-micrometer channel length. More importantly, close packed and porous film structures can be controlled by adjusting the space between the electrodes, resulting in a two orders of magnitude difference in carrier mobility. The technique is completely compatible with lithography methods thus may find potential applications in addressable and crosstalk suppressing OFET arrays.