Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVD
1988
The unusual phenomenon that largely lattice-mismatched ZnS layers grown on GaAs by MOCVD show better surface morphology and crystalline quality than less mismatched ZnS layers on GaP has been investigated by X-ray diffraction measurements. The results indicate that this phenomenon can be ascribed to the strain-relaxation taking place at an earlier stage of epitaxial growth on GaAs than on GaP substrates.
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