Photoluminescence study of GaAs thin films and nanowires grown on Si(111)

Mg-doped GaAs nanowires have been grown by molecular beam epitaxy on a partially Au-coated Si(111) substrate by the vapor–liquid–solid mechanism. Outside the coated areas, a thin film of GaAs was grown epitaxially at the same time. The optical properties in both parts of the sample were investigated by photoluminescence spectroscopy, as a function of temperature. A structured emission in the range ∼1.25–1.55 eV was observed at 10 K and the resemblances in both cases were identified. The radiative transitions are discussed with relevance to known defect centers in the GaAs thin films and to their possible relation with the zinc-blende and wurtzite phases in the nanowires. The presence of both crystalline phases in the nanowires was confirmed by μ-Raman spectroscopy.