Characterization and annealing effect of tantalum oxide thin film by thermal chemical

thin film IS a promising material for the high dielectrics of ULSI DRAM. In this study, thin film was grown on p-type( 100) Si wafer by thermal metal organic chemical vapo deposition ( MCCVD) method and the effect of operating varialbles including substrate temperature( ), bubbler temperature( ), reactor pressure( P ) was investigated in detail. thin film were analyzed by SEM, XRD, XPS, FT-IR, AES, TEM and AFM. In addition, the effect of various anneal methods was examined and compared. Anneal methods were furnace annealing( FA) and rapid thermal annealing( RTA) in or ambients. Growth rate was evidently classified into two different regimes. : (1) surface reaction rate-limited reglme in the range of =300 ~ and (2: mass transport-limited regime in the range of =400 ~ .It was found that the effective activation energies were 18.46kcal/mol and 1.9kcal/mol, respectively. As the bubbler temperature increases, the growth rate became maximum at =. With increasing pressure, the growth rate became maximum at P=3torr but the refractive index which is close to the bulk value of 2.1 was obtained in the range of 0.1 ~ 1 torr. Good step coverage of 85. 71% was obtained at = and sticking coefficient was 0.06 by comparison with Monte Carlo simulation result. From the results of AES, FT-IR and E M , the degree of SiO, formation at the interface between Si and TazO, was larger in the order of FA- > RTA-, FA- > RTA-. However, the ambient annealing resulted in more severe Weficiency in the thin film than the TEX>$O_{2}$ ambient.