Double-sided growth four-junction solar battery containing quantum structure

The invention discloses a double-sided growth four-junction solar battery containing a quantum structure. The double-sided growth four-junction solar battery comprises a GaAs substrate. The GaAs substrate is an n-type GaAs single crystal wafer with two sides polished. A GaInP sub battery, a GaAs sub battery and a first GaAs buffer layer are arranged on the upper surface of the GaAs substrate. A second GaAs buffer layer, a first quantum point sub battery and a second quantum point sub battery are arranged on the lower surface of the GaAs substrate. The GaIn sub battery is connected with the GaAs sub battery through a third tunnel junction. The GaAs sub battery is connected with the first GaAs buffer layer through a second tunnel junction. The first quantum point sub battery is connected with the second quantum point sub battery through a first tunnel junction. The use ratio of the solar battery to solar spectrum can be improved, and therefore the photoelectric conversion efficiency of the multi-junction solar battery can be improved.