A V-BAND MONOLITHIC InP HEMT DOWNCONVERTER

This paper reports a monolithic V-band downconverter implemented using 0.1 pm InAlAsInGaAs-InP HEMT technology. The 5.0 X 3.0 mm2 MMIC contains a V-band three-stage low noise amplifier, a single-balanced diode mixer, and an IF distributed amplifier. The noise figure of the LNA is less than 3 dB with an associated gain of more than 24 dB between 56 and 64 GHz. The complete downconverter demonstrates a conversion gain of more than 21 dB for the same frequency range with an LO drive of 10 dBm at 54 GHz. Total dc power consumption of the downconverter is less than 32 mW.