Properties of p-n-junctions formed by a laser irradiation of a surface of n-Cd1−xZnxTe single crystal

Photosensitive barrier structures were fabricated by high-power pulsed laser irradiation of a freshly-cleaved surface of п-type bulk Cd1−xZnxTe substrates. Their electrical properties were investigated and discussed. Dominant carrier mechanisms at a forward and a reverse bias in terms of a recombination and tunnel-recombination model were analyzed. At the illumination reaching 100 mW cm−2, these surface-barrier р-Cd1−хZnхTe/п-Cd1−хZnхTe structures were possessed by the following photoelectric parameters: open-circuit voltage Voc = 0.61 V, short-circuit current Isc = 0.21 mА and fill factor FF = 0.49, respectively.