Grain Boundary Structure in S-WEB Silicon Ribbon

Electrical activity and structure of the defects in S-WEB silicon ribbon are characterized by EBIC and TEM, resp. The EBIC indicates electrical activity at grain boundaries other than coherent and symmetrical twin boundaries, and at dislocations attached to these boundaries as well as occurring in the grain volume. The analysis by TEM shows that the structure of the ribbon is dominated by Σ=3 twin boundaries, which may react to form short segments of Σ=9 second order twin boundaries. No twin boundaries of even higher order are encountered in this investigation.