A comprehensive solution for ultra-thin oxide reliability issue including a novel explanation of power-law exponent variations [MOSFETs]

In this paper, we propose the validation of power law modeling of gate oxide voltage acceleration. By varying the nitrogen concentration in the oxide, the power law exponent decreases. This effect may be explained by analyzing the potential barrier of the dielectric as a function of nitrogen content. From the view of reliability projection, a new failure criterion is devised to extend to 65 nm technology or a higher operation voltage application.