Planar stress relaxation in solid phase epitaxial CaF2 films grown on (111)Si by in situ rapid isothermal processing

Planar strain in CaF2 films on (111) Si substrate has been measured by an x‐ray double‐crystal diffraction technique using rocking curves. The films grown by a solid phase epitaxial approach using in situ rapid isothermal processing are almost free of tensile planar strain, and free from defects as observed by the transmission electron microscope diffraction pattern.