LED element with thin-film semiconductor device based on gallium nitride

The invention relates to an LED module comprising a LED chip (1) comprising an active gallium nitride layer (2), and a silicon platform (3) on which the LED chip (1) is arranged, wherein the silicon platform (3 side) facing away from one (the LED chip 1) (3b) two electrodes (4a, 4b) which are (with the LED chip 1) in electrical communication, and wherein the thickness of the gallium nitride layer (2) of the LED chips (1) 2 to 10 microns, preferably 1 to 5 microns.