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Acemap > Paper > 28aRD-3 Si(111)表面上のAgエピタキシャル成長の基板温度依存性(28aRD 表面界面構造,領域9(表面・界面,結晶成長))

28aRD-3 Si(111)表面上のAgエピタキシャル成長の基板温度依存性(28aRD 表面界面構造,領域9(表面・界面,結晶成長))

2009 
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