D- state in silicon

Abstract D - state in phosphorus-doped silicon has been studied by means of longwavelength (submillimeter plus millimeter) photoconductivity measurements. The concentration dependence of the D - state spectra indicates the transition from an isolated D - state to a state of an electron bound to more than one neutral donors, D n - . A [100] stress experiment reveals the effect of the donor core potential on the D - state.