Anisotropic magnetoconductance in metallic doped Ge:Sb

Abstract The dependence of magnetoconductance on the direction of a magnetic field is measured in four valley and stressed single valley lightly metallic Ge:Sb, and is analyzed on the basis of the localization and the interaction theories of dirty metal. Positive magnetoconductance is described fairly well by the localization theory in its anisotropy. The theory is consistent with the experiment also in its magnitude in single valley case but is too large in four valley case. Negative magnetoconductance is analyzed as a sum of the components of orbital and g -factor anisotropy. The latter contribution is found to be dominant, though its magnitude is larger than the interaction theory both in four and single valley cases.