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Changes in the lattice relaxation process for the number of Si layer inserted at the initial stage of GaInN growth on GaN
Changes in the lattice relaxation process for the number of Si layer inserted at the initial stage of GaInN growth on GaN
2021
Haruka Yokoyama
Tomohiro Yamaguchi
Takuo Sasaki
Soichiro Ohno
Takanori Kiguchi
Hiroki Hirukawa
Seiji Fujikawa
Masamitu Takahasi
Takeyoshi Onuma
Tohru Honda
Keywords:
lattice
Condensed matter physics
relaxation process
Stage (hydrology)
Materials science
layer
Correction
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