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SWIR responsivity characteristics of InGaAs PhotoFETs considering the parasitic resistance
SWIR responsivity characteristics of InGaAs PhotoFETs considering the parasitic resistance
2021
Kazuaki Oishi
Hiroyuki Ishii
Wen Hsin Chang
H. Ishii
Akira Endoh
Hiroki I. Fujishiro
Tatsuro Maeda
Keywords:
Semiconductor
Parasitic element
Materials science
Optoelectronics
Responsivity
Correction
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