Fabrication and characterization of high power Gallium Nitride based terahertz Gunn diodes
2020
In this paper, we report the fabrication and characterization of a THz Gunn source based on Gallium Nitride (GaN) with side-contact and field-plate technologies. This source works stable at operating voltages up to 20 V due to good passivation layer and good heat sink to the GaN substrate. The GaN-based Gunn diode has relatively high forward current of 0.9 A and a high current drop of about 50 mA for higher frequency and output power.
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