Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

Carl Junesand,Ming-Horn Gau,Yan-Ting Sun,Sebastian Lourdudoss,Ikal Lo,Juan Manuel Bautista Jiménez,P. A. Postigo,Fransisco Miguel Morales,Jesús Hernández,S. I. Molina,Aouni Abdessamad,Galia Pozina,Lars Hultman,Pirouz Pirouz

Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

2014

Carl Junesand
Ming-Horn Gau
Yan-Ting Sun
Sebastian Lourdudoss
Ikal Lo
Juan Manuel Bautista Jiménez
P. A. Postigo
Fransisco Miguel Morales
Jesús Hernández
S. I. Molina
Aouni Abdessamad
Galia Pozina
Lars Hultman
Pirouz Pirouz

Epitaxial lateral overgrowth of InP has been grown by hydride vapor phase epitaxy on Si substrates with a thin seed layer of InP masked with SiO2. Openings in the form of multiple parallel lines as ...

Keywords:

Hydride
Epitaxy
Materials science
Inorganic chemistry
Composite material
lateral overgrowth
vapor phase

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