Hall effect in La0.6Sr0.4MnO3 thin films

Abstract We studied the temperature and thickness dependence of the transport properties of La 0.6 Sr 0.4 MnO 3 films. Hall voltage and magnetoresistance measurements on 10 and 150 nm thick films were performed with this porpose. From the ordinary Hall component, we calculated the density of carriers, which has hole-character and is systematically lower than that expected from the chemical composition of the manganite in both samples. Localization effects observed at low temperature in the resistivity of the thinner film, associated with the substrate-induced disorder, are correlated with a decrease of the density of carriers.