Processing of guided wave optoelectronic materials. Proceedings of the Meeting, Los Angeles, CA, January 24, 25, 1984

Electro-optic materials issues and guided wave optoelectronics are discussed, taking into account an early history of lithium niobate, a comparison of LiNbO3 and III-V semiconductor technologies for integrated optics, materials requirements for GaAs for optoelectronic applications, the chemistry of LiNbO3 as an optoelectronic material, and laser assisted growth of optical quality single crystal fibers. Topics related to waveguide fabrication are explored, giving attention to effects of water vapor on TiO2, LiNb3O8 and (Ti/x/Nb/1-x/)O2 compound kinetics during Ti:LiNbO3 waveguide fabrication, short- and long-term stability in proton exchanged lithium niobate waveguides, materials analysis and optical characteristics in the case of proton-exchanged LiNbO3 waveguides, planar and channel waveguides fabricated by nitrogen ion implantation in fused silica, and configurations for high speed GaAs CCD imagers. The photorefractive effect in waveguides, and the limitations of niobate and III-V materials for guided wave optoelectronic applications are also considered.