Characterization and evaluation of current transport properties of power SiC Schottky diode

Abstract This paper presents the characterization and evaluation of current transport properties of power SiC Schottky diode. The evaluation of the main Schottky diode properties is based on the proposed advanced model. This model allows assessing the effect of particular current transport mechanisms with high accuracy. The presence and influence of tunneling current in I-V characteristics are evident, mainly for low temperatures. Unlike previously published results, the proposed model provides a reasonable slight decrease of Schottky barrier height with increasing temperature due to the narrowing of the energy bandgap. The results and model are validated by finite element method (FEM) electrophysical simulations. Evaluated parameters of SiC Schottky diode, such as Schottky barrier height of 1.28 eV and Richardson constant of 1.46 × 106 Am−2K−2 are in good agreement with recent research and FEM simulations.