Proximity effects in electron beam lithography in SAL 601 resists on a Si-SiO 2 -Si substrate

Abstract A computer software is developed for calculation of the energy density distribution in the SAL 601 resist. In the case of a point source electron beam both lateral and depth evolution of the energy deposition are determined. Simulation of a line source is then achieved. Different geometries are modelled; the equidensity energy contours are obtained. The proximity effects are studied notably for isolated lines and arrays of lines and spaces.