Thermal degradation of TiSi2/poly-Si gate electrodes

Abstract The influence of high temperature processing steps on the integrity of a polycide metal-oxide-semiconductor system has been investigated. At temperatures exceeding 900°C the TiSi 2 /poly-Si (where poly-Si is polycrystalline silicon) system is not stable, and the dielectric strength of an underlaying gate oxide deteriorates. Degradation of the silicide-poly-Si interface was detected by backscattering spectrometry. Scanning and transmission electron microscopy revealed silicon precipitation and silicide film deformation.