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Study of HfO 2 /AlGaN/GaN MOS-HEMT for High Power Application
Study of HfO 2 /AlGaN/GaN MOS-HEMT for High Power Application
2014
W.C. Lan
P. C. Chin
Y C Lin
J. S. Maa
E. Y. Chang
Keywords:
Electronic engineering
High-electron-mobility transistor
Materials science
algan gan
power application
Optoelectronics
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