Inversion domains in AlGaN films grown on patterned sapphire substrate

Abstract The inversion domain (ID) formed in the Al 0.17 Ga 0.83 N layer grown by metalorganic chemical vapor deposition on c-plane patterned sapphire was confirmed by transmission electron microscopy. The IDs were found to be generated at the sapphire/AlGaN interface. Most of IDs vanish in the grown layer but some IDs propagate to the surface. Contriving the growth process remarkably reduced the density of IDs.