Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing

a b s t r a c t Magnetic properties and microstructure of Cr-implanted Si have been investigated by alternating gradi- ent magnetometer (AGM), superconducting quantum interference device (SQUID) magnetometer, and transmission electron microscopy (TEM). p-Type (1 0 0) Si wafers were implanted at 200 keV at room temperature with a dosage of 1 × 10 16 cm −2