Electrical and Physical Properties of the Bi3.25La0.75Ti3O12 Ferroelectric Thin Films Prepared by Conventional Temperature Annealing Process

We have investigated the structure and ferroelectric properties of the Bi3.25La0.75Ti3O12 (BLT) thin films on SiO2/Si substrate fabricated by sol-gel method. We used the BLT films were annealed at various temperatures of 600, 650, and 700°C for one hour by conventional furnace annealing (CTA). The temperature dependence of leakage currents densities of ferroelectric BLT thin films. The crystalline structure of the prepared BLT thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. The leakage current density and capacitance of thin film were measured by HP4156C.