Fabrication of GaAs Schottky Nano-diodes with T-Anodes for Submillimeter Wave Mixers

We report on the design and fabrication of a T-anode Schottky structure for millimeter and submillimeter wave mixers. The process for anti-parallel pairs of diodes with submicronic anode areas on 10µm thick GaAs substrate is presented and these diodes will be used in a 330GHz sub- harmonic mixer block. I(V) measurements have been performed and values of the ideality factor and the reverse saturation current have been determined.