Photoluminescence peak shift with increasing temperature and excitation intensity in a-Si:H

Abstract Temperature and excitation intensity dependence of photoluminescence (PL) in hydrogenated amorphous silicon (α-Si:H) are studied. Red shift of time-resolved PL spectra associated with increasing temperature and blue shift with increasing excitation intensity are observed. Both shifts are described with variable range hopping at high temperature. Below 80K, the red shift deviates from the model, showing linear dependence on temperature.